Abstract
This paper presents a simple novel technique-forward gated-diode R-G current method—to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N− MOSFET’s simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N− surface doping concentration and corresponding region’s interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET’s in the current ULSI technology.
This is a preview of subscription content, log in via an institution to check access.
References
J. A. M. Otten, F. M. Klaassen, Measuring the drain voltage dependent series resistance in submicron LDD MOSFET’s, Microelectronics Engineering, 19(1992)4, 703–706.
Steve Shao-Shiun Chung, Lee Jeng-Sheng, New approach to determine the drain-and-source series resistance of LDD MOSFET, IEEE Trans. on Electron Devices, ED-40(1993)7, 1709–1711.
T. Ernst, S. Cristoloveanu, A. Vandooren, et al., Carrier lifetime extraction in fully depletion SOI device, Proceeding of 1998 IEEE International SOI Conference, Hong Kong, Oct., 1998, 21–22.
t. Ernst, S. Cristoloveanu, et al., Recombination current modeling and carrier lifetime extraction in dual-gated fully-depleted SOI devices, IEEE Trans. on Electron Devices, ED-46(1999)7, 1503–1509.
He Jin, Huang Ru, Zhang Xing, Wang Yuangyuan, et al., Numerical analysis on the interface R-G current of the SOI gated-diode, SOI group’s report to Motorola, No.1.
He Jin, Huang Ru, Zhang Xing, Huang Aihua, Wang Yuangyuan, Gated-diode R-G current: A sensitive tool for characterizing the back traps of SOI devices, SOI group’s report to Motorola, No.2.
User’s manual of DESSIS-ISE.6.0, Integration System Engineering, Inc., 2000, 12–120.
Author information
Authors and Affiliations
Additional information
Sponsored by Motorola CPTL(Contract No: MSPSDDLCHINA-0004)
About this article
Cite this article
He, J., Huang, A., Zhang, X. et al. Forward gated-diode R-G current method: A simple novel technique for characterizing lateral lightly doping region of LDD MOSFET’s. J. of Electron.(China) 18, 188–192 (2001). https://doi.org/10.1007/s11767-001-0027-2
Issue Date:
DOI: https://doi.org/10.1007/s11767-001-0027-2