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Resistive switching effects in oxide sandwiched structures

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Abstract

Resistive switching (RS) behaviors have attracted great interest due to their promising potential for the data storage. Among various materials, oxide-based devices appear to be more advantageous considering their handy fabrication and compatibility with CMOS technology, though the underlying mechanism is still controversial due to the diversity of RS behaviors. In this review, we focus on the oxide-based RS memories, in which the working mechanism can be understood basically according to a so-called filament model. The filaments formation/rupture processes, approaches developed to detect and characterize filaments, several effective attempts to improve the performances of RS and the quantum conductance behaviors in oxide-based resistive random access memory (RRAM) devices are addressed, respectively.

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Authors and Affiliations

  1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo, 315201, China

    Xiao-Jian Zhu, Jie Shang & Run-Wei Li

  2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo, 315201, China

    Xiao-Jian Zhu, Jie Shang & Run-Wei Li

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  1. Xiao-Jian Zhu
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  2. Jie Shang
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Correspondence to Run-Wei Li.

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Zhu, XJ., Shang, J. & Li, RW. Resistive switching effects in oxide sandwiched structures. Front. Mater. Sci. 6, 183–206 (2012). https://doi.org/10.1007/s11706-012-0170-8

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