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Scaled nano-and microrelief of ordering regions in Al x Ga1 − x As/GaAs(100) epitaxial heterostructures

  • E. P. DomashevskayaEmail author
  • P. V. Seredin
  • L. A. Bityutskaya
  • I. N. Arsent’ev
  • D. A. Vinokurov
  • I. S. Tarasov
Article
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Abstract

The Al x Ga1 − x As/GaAs(100) heterostructures grown by MOS hydride epitaxy were studied using atomic force and scanning electron microscopy. Regions with an ordered nanorelief with a period of approximately 115 nm were discovered on the surface of the sample with x ∼ 0.50. An AlGaAs2 superstructural phase appears in these regions.

Keywords

Surface Investigation Neutron Technique Surface Relief Epitaxial Structure Epitaxial Heterostructure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • E. P. Domashevskaya
    • 1
    Email author
  • P. V. Seredin
    • 1
  • L. A. Bityutskaya
    • 1
  • I. N. Arsent’ev
    • 2
  • D. A. Vinokurov
    • 2
  • I. S. Tarasov
    • 2
  1. 1.Voronezh State UniversityVoronezhRussia
  2. 2.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia

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