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Quantum and surface properties of free films and nanoshells of molecular and atomic thicknesses

  • V. Ya. PrinzEmail author
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Abstract

An original technology and the properties of new thin film nanoobjects, free films and shells of molecular and atomic thicknesses, are presented. Special attention is paid to shells of monoatomic or monomoleculer thickness with unique surface properties that have not been found in bulk materials.

Keywords

GaAs Surface Investigation Neutron Technique GaAs Layer Free Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    V. Ya. Prinz, V. A. Seleznev, and A. K. Gutakovsky, The Physics of Semiconductors, World Sci. ISBN 981-02-4030-9 (1999).Google Scholar
  2. 2.
    V. Ya. Prinz, V. A. Seleznev, A. K. Gutakovsky, et al., Physica E 6 (1–4), 828 (2000).Google Scholar
  3. 3.
    V. Ya. Prinz, Microelectronic Eng. 69 (2–4), 466 (2003).Google Scholar
  4. 4.
    V. Ya. Prinz, Izv. Vyssh. Uchebn. Zaved., Fiz. 46 (6), 35 (2003).Google Scholar
  5. 5.
    V. Ya. Prinz, Physica E 23, 260 (2004).Google Scholar
  6. 6.
    V. Ya. Prinz, Physica E 23, 54 (2004).Google Scholar
  7. 7.
    V. Ya. Prinz and S. V. Golod, Prikl. Mekh. Tekh. Fiz. 47 (6), 114 (2006).Google Scholar
  8. 8.
    S. V. Golod, V. Ya. Prinz, V. I. Mashanov, et al., Semicond. Sci. Techn. 16, 181 (2001).Google Scholar
  9. 9.
    V. Ya. Prinz, Phys. Stat. Solidi 243 (13), 3333 (2006).Google Scholar
  10. 10.
    V. M. Osadchii and V. Ya. Prinz, JETP Lett. 72, 312 (2000).Google Scholar
  11. 11.
    V. M. Osadchii and V. Ya. Prinz, Phys. Rev. B 71, 1 (2005).Google Scholar
  12. 12.
    A. B. Vorobiev, K.-J. Friendland, H. Kostial, et al., Phys. Rev. B 75, 205–309 (2007).Google Scholar
  13. 13.
    K. S. Novoselov et al., Proc. Nat. Acad. Sci. U.S.A. 102, 10451 (2005).Google Scholar
  14. 14.
    K. S. Novoselov, A. K. Geim, S. V. Morozov, et al., Science 306, 666 (2004).Google Scholar
  15. 15.
    K. S. Novoselov et al., Nature 438, 197 (2006).Google Scholar
  16. 16.
    M. Katsnelson, Materials Today 10, 1 (2007).Google Scholar
  17. 17.
    F. Schedin, K. S. Novoselov, S. V. Morozov, et al., Condens. Matter (2006); arxiv.org/abs/cond-mat/0610809.Google Scholar
  18. 18.
    Y. Niimi, T. Matsui, H. Kambara, et al., Phys. Rev. B 73, 085 421 (2006).Google Scholar
  19. 19.
    S. Banerjee, M. Sardar, N. Gayathri, et al., Phys. Rev. B 72, 075 418 (2005).Google Scholar
  20. 20.
    E. V. Castro, K. S. Novoselov, S. V. Morozov, et al., Condens. Matter (2006); arxiv.org/abs/cond-mat/0611342.Google Scholar
  21. 21.
    S. V. Golod, V. Ya. Prinz, P. Wägli, et al., Appl. Phys. Lett. 84 (17), 3391 (2004).Google Scholar
  22. 22.
    Yu. V. Nastaushev, V. Ya. Prinz, and S. N. Svitasheva, Nanotecnology 16, 908 (2005).Google Scholar
  23. 23.
    V. A. Seleznev, H. Yamaguchi, Y. Hirayama, et al., Jpn. J. Appl. Phys. 42 (7), L79 (2003).Google Scholar
  24. 24.
    A. V. Chehovskiy and V. Ya. Prinz, Intern. J. Nanosci. 3 (1–2), 1 (2004).Google Scholar
  25. 25.
    E. V. Naumova, V. Ya. Prinz, S. V. Golod, et al., in Abstr. Book Joint 31st Intern. Conf. Infrared Millimeter Waves and 14th Intern. Conf. Terahertz Electronics, China (Shanghai, 2006), p. 351.Google Scholar
  26. 26.
    A. Cho, Science 313, 164 (2006).Google Scholar
  27. 27.
    A. Cho, Science 311, 1861 (2006).Google Scholar
  28. 28.
    M. De Crescenzi, P. Castrucci, M. Scarselli, et al., Appl. Phys. Lett. 86, 231 901 (2005).Google Scholar
  29. 29.
    P. Zang, E. P. Nordberg, B. N. Park, et al., New J. Phys. 8, 200 (2006).Google Scholar
  30. 30.
    I. V. Antonova, R. A. Soots, and V. Ya. Prinz, ECS Transactions 2 (2006).Google Scholar
  31. 31.
    A. A. Maslov, V. V. Aniskin, A. N. Shiplyuk, et al., in Proc. of Intern. Conf. Methods Aeroph. Research, Novosibirsk (Nonparel, Novosibirsk, 2004), p. 235. 32. V. A. Seleznev and V. Ya. Prinz, in Proc. of Intern. Conf. Nanosci. Technol. ICN&T, Switzerland, 2006 (Basel, 2006).Google Scholar
  32. 33.
    A. V. Prinz, V. Ya. Prinz, and V. A. Seleznev, Microelectron. Eng. 67–68, 782 (2003).Google Scholar
  33. 34.
    V. Ya. Prinz and V. A. Seleznev, Phys. Status Solidi B (2007) (in press).Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  1. 1.Rzhanov Institute of Semiconductor PhysicsSiberian Branch of the Russian Academy of SciencesNovosibirskRussia

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