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Prediction of Interfacial Reaction Between Cu and In During Low-Temperature Soldering

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Abstract

Interfacial reaction between Cu and In has been predicted and analyzed based on computational thermodynamics and diffusion kinetics. The Cu11In9 compound phase is predicted to form first and grow dominantly at the initial stage of the reaction between Cu-rich FCC and In-rich liquid phases during low-temperature soldering. The diffusion coefficient in the Cu11In9 compound is assessed to enable a quantitative prediction of the layer growth during the soldering process. The present work enables a reasonable prediction of the interfacial reaction between Cu and In for a given temperature profile, as well as process optimization through control of intermetallic compound growth kinetics.

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Acknowledgments

This research has been financially supported by Samsung Electronics Co. Ltd., Republic of Korea.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea

    Sang-Ho Oh & Byeong-Joo Lee

  2. Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Company Ltd., Suwon, Republic of Korea

    Kunmo Chu

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This invited article is part of a special tribute issue of the Journal of Phase Equilibria and Diffusion dedicated to the memory of former JPED Editor-in-Chief John Morral. The special issue was organized by Prof. Yongho Sohn, University of Central Florida; Prof. Ji-Cheng Zhao, University of Maryland; Dr. Carelyn Campbell, National Institute of Standards and Technology; and Dr. Ursula Kattner, National Institute of Standards and Technology.

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Oh, SH., Chu, K. & Lee, BJ. Prediction of Interfacial Reaction Between Cu and In During Low-Temperature Soldering. J. Phase Equilib. Diffus. 43, 876–882 (2022). https://doi.org/10.1007/s11669-022-01008-w

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