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Evaluation of Ti3Si Phase Stability from Heat-Treated, Rapidly Solidified Ti-Si Alloys

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Abstract

Ti-base alloys containing significant amounts of silicon have been considered for high temperature structural applications. Thus, information concerning phase stability on the Ti-Si system is fundamental and there are not many investigations covering the phase stability of the Ti3Si phase, specially its dependence on oxygen/nitrogen contamination. In this work the stability of this phase has been evaluated through heat-treatment of rapidly solidified Ti-rich Ti-Si alloys at 700 °C and 1000 °C. The rapidly solidified splats presented nanometric scale microstructures which facilitated the attainment of equilibrium conditions. The destabilization of Ti3Si due to oxygen/nitrogen contamination has been noted.

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Authors and Affiliations

  1. Departamento de Engenharia de Materiais (DEMAR), Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Caixa Postal 116, 12600-970, Lorena, São Paulo, Brazil

    Alex Matos da Silva Costa, Carlos Angelo Nunes, Gilberto Carvalho Coelho & Paulo Atsushi Suzuki

  2. Departamento de Engenharia de Materiais, Centro de Ciências Exatas e de Tecnologia, Universidade Federal de São Carlos, Rod. Washington Luiz, Km 235, Caixa-Postal: 676, 13565-905, Sao Carlos, São Paulo, Brazil

    Gisele Ferreira de Lima

  3. UniFoa, Centro Universitário de Volta Redonda, Núcleo de Pesquisa, Campus Três Poços, Avenida Paulo Erlei Alves Abrantes, 1325, Bairro três Poços, 27240-560, Volta Redonda, Rio de Janeiro, Brazil

    Geovani Rodrigues & Gilberto Carvalho Coelho

Authors
  1. Alex Matos da Silva Costa
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  2. Gisele Ferreira de Lima
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  3. Geovani Rodrigues
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  4. Carlos Angelo Nunes
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  5. Gilberto Carvalho Coelho
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  6. Paulo Atsushi Suzuki
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Correspondence to Carlos Angelo Nunes.

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da Silva Costa, A.M., de Lima, G.F., Rodrigues, G. et al. Evaluation of Ti3Si Phase Stability from Heat-Treated, Rapidly Solidified Ti-Si Alloys. J. Phase Equilib. Diffus. 31, 22–27 (2010). https://doi.org/10.1007/s11669-009-9610-2

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  • DOI: https://doi.org/10.1007/s11669-009-9610-2

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