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Cobalt diffusion in different microstructured WC-Co substrates during diamond chemical vapor deposition

  • Basic And Applied Research
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Abstract

Our investigation on diamond deposition using cemented tungsten carbide (WC-Co) has shown that diamond particles deposit at different rates onto micrograin and coarse-grain WC-Co substrates. Diamond deposition was carried out using a parallel-plate plasma-enhanced chemical vapor deposition system, which utilized the bias-enhanced growth (BEG) process. BEG was performed at four different times: 15, 20, 25, and 30 min. The resultant diamond-based deposits were characterized for morphology, microstructure, and crystallinity using scanning electron microscopy. It was found that diamond nucleation initiated at the grain boundaries of the substrates. The present article discusses the possible reasons that can potentially explain our key findings. In particular, the CO diffusion from the bulk material through the grain boundaries and onto the substrate surface using a theoretical approach.

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Authors and Affiliations

  1. Centre for Mechanical Technology and Automation, University of Aveior, Campus Universitário de Santiago, 3810-193, Aveiro, Portugal

    G. Cabral, N. Ali, E. Titus & J. Gracio

Authors
  1. G. Cabral
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  2. N. Ali
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  3. E. Titus
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  4. J. Gracio
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Additional information

This article is a revised version of the paper printed in the Proceedings of the First International Conference on Diffusion in Solids and Liquids—DSL-2005, Aveiro, Portugal, July 6–8, 2005, Andreas Öchsner, José Grácio and Frédéric Barlat, eds., University of Aveiro, 2005.

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Cabral, G., Ali, N., Titus, E. et al. Cobalt diffusion in different microstructured WC-Co substrates during diamond chemical vapor deposition. J Phs Eqil and Diff 26, 411–416 (2005). https://doi.org/10.1007/s11669-005-0027-2

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  • DOI: https://doi.org/10.1007/s11669-005-0027-2

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