Abstract
To explore the influence mechanism of La doping on the arc erosion resistance of Ag/SnO2 contact materials, SnO2 and La-doped SnO2 are prepared by a chemical coprecipitation method, and then Ag/SnO2 and La-doped Ag/SnO2 contact materials are prepared by a powder metallurgy process. The microstructures and phase structures of the Ag/SnO2 and La-doped Ag/SnO2 contact materials before and after arc erosion are analyzed. A laser-simulated arc is used as the experimental arc to explore the micromorphology and physicochemical properties of SnO2 and La-doped SnO2 after laser-simulated arc erosion. The results show that the density, hardness and conductivity of the La-doped Ag/SnO2 contact material all increase first and then decrease with an increasing La content, reaching their highest values at a La/Sn molar ratio of approximately 0.25. La doping improves the dispersion of SnO2 in the Ag matrix and reduces the mass loss of the La-doped Ag/SnO2 contact material during the arc erosion process. Under the action of a laser-simulated arc, although both parts of the SnO2 and La-doped SnO2 transform into SnO, most of the SnO2 sample forms large aggregates, while the La-doped SnO2 sample forms small, spherical particles that are well dispersed. Finally, a mechanism is proposed whereby La doping enhances the arc erosion resistance of Ag/SnO2 contact materials.
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Acknowledgments
The authors are grateful for the financial support of the National Natural Science Foundation of China (No. 21603169), the Project Support by the Natural Science Basic Research Plan in the Shaanxi Province of China (Program No. 2016JM5049), and the Key R&D Plan of Shaanxi Province (Program No. 2018GY-110). The authors also thank Dr. David Larner for the language editing in this paper.
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Liu, S., Sun, Q., Wang, J. et al. Exploration of the Influence Mechanism of La Doping on the Arc Erosion Resistance of Ag/SnO2 Contact Materials by a Laser-Simulated Arc. J. of Materi Eng and Perform 30, 7577–7583 (2021). https://doi.org/10.1007/s11665-021-05966-z
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DOI: https://doi.org/10.1007/s11665-021-05966-z