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Effect of Temperature on the Performance of an Ion-Sensitive Field-Effect Transistor-Type Chemical Sensor with Aluminum Nitride Membrane

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Abstract

ISFET chemical sensors offer innovative solutions for the detection of chemical species by optimizing the ionosensitive membrane or layer between the aqueous medium and the insulation. As a result, the information provided by the sensor is no longer reliable. This is a major problem, as operators are often required to take measurements in an environment with higher or lower temperatures. The study of the effect of temperature on the detection parameters of the sensor, which are the surface potential, linearity and sensitivity, seems essential. The mathematical model presented in this article describes the physicochemical and thermal behavior of the sensor. First, it allows a series of simulations to be carried out on the variation in sensitivity, potential, and linearity with respect to the variation in pH. The second part of this work concerns the influence of temperature on the behavior of the sensor. Hence the determination of the temperature coefficient of the sensitivity, which is an indication of the performance of the sensor. It is also noted that the nature of the membranes of the sensors (Si3N4, Al2O3, SnO2) influences the temperature coefficient.

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Acknowledgments

All the people who contributed to the realization of this paper.

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Authors and Affiliations

  1. Université des Sciences et de la Technologie d’Oran Mohamed Boudiaf, Bir El Djir, Oran, Algeria

    Nadia Benattou, Zoubir Ahmed Fouatih & Chifaa Aber

  2. Laboratoire d’Instrumentation et Matériaux Avancés, Centre Universitaire Nour Bachir El-Bayadh, BP 900 route Aflou, 32000, El-Bayadh, Algeria

    Azzedine Hamid & Yacine Guettaf

  3. Nancy-Universite, Nancy, Lorraine, France

    Mohammed Hacene Hamid

Authors
  1. Nadia Benattou
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  2. Azzedine Hamid
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Correspondence to Nadia Benattou.

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Benattou, N., Hamid, A., Fouatih, Z.A. et al. Effect of Temperature on the Performance of an Ion-Sensitive Field-Effect Transistor-Type Chemical Sensor with Aluminum Nitride Membrane. J. of Materi Eng and Perform 30, 585–595 (2021). https://doi.org/10.1007/s11665-020-05337-0

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  • DOI: https://doi.org/10.1007/s11665-020-05337-0

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