Abstract
We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10 μm in size) and shows Seebeck coefficient as high as 270 µV/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 µW/mK2 at 800 K, twice than observed in the film deposited at 60 mTorr of oxygen.
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Acknowledgments
This work was partially supported by Research Center for Environmentally Friendly Materials Engineering of Muroran Institute of Technology in the framework of “Internal Internship program F.Y. 2017-2018”. S.S., P.M., and S.O. are grateful to Prof. Hideaki Takano of Department of Applied Sciences, Muroran Institute of Technology, for his warm encouragements. S.S. and P.M. thank Dr. Alok K. Jha (Kyushu Institute of Technology) for providing the thickness measurements.
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Saini, S., Mele, P., Osugi, S. et al. Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition. J. of Materi Eng and Perform 27, 6286–6290 (2018). https://doi.org/10.1007/s11665-018-3601-6
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DOI: https://doi.org/10.1007/s11665-018-3601-6