Synthesis and Characterization of Silicon Nanowires by Electroless Etching
Silicon nanowires (SiNWs) were synthesized by two-step electroless etching of p-type Si (100) wafer and characterized by field emission scanning electron microscopy, UV–Vis spectroscopy, x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The vibrational signature at 1108 and 2087 cm−1 confirmed SiNWs were passivated by both oxygen and hydrogen atoms. Raman peak at 517 cm−1 indicated crystalline SiNWs with tailing toward redshift due to Fano effect. The Si(2p) and Si(2s) core orbital spectra of SiNWs were found at 99.8 and 150.5 eV, respectively. Moreover, the reflection of SiNWs is minimized to ~ 1 to 5% in the 650-nm wavelength.
KeywordsFESEM FTIR Raman silicon nanowires XPS
The financial support from T.M.A Pai and Vasanti Pai Endowment fund is acknowledged. One of the authors (Ms. Rabina Bhujel) acknowledges the financial support for the above-mentioned project.
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