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Synthesis and Characterization of Silicon Nanowires by Electroless Etching

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Abstract

Silicon nanowires (SiNWs) were synthesized by two-step electroless etching of p-type Si (100) wafer and characterized by field emission scanning electron microscopy, UV–Vis spectroscopy, x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The vibrational signature at 1108 and 2087 cm−1 confirmed SiNWs were passivated by both oxygen and hydrogen atoms. Raman peak at 517 cm−1 indicated crystalline SiNWs with tailing toward redshift due to Fano effect. The Si(2p) and Si(2s) core orbital spectra of SiNWs were found at 99.8 and 150.5 eV, respectively. Moreover, the reflection of SiNWs is minimized to ~ 1 to 5% in the 650-nm wavelength.

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Acknowledgment

The financial support from T.M.A Pai and Vasanti Pai Endowment fund is acknowledged. One of the authors (Ms. Rabina Bhujel) acknowledges the financial support for the above-mentioned project.

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Authors and Affiliations

  1. Nano-processing Laboratory, Centre for Materials Science and Nanotechnology, Sikkim Manipal Institute of Technology, Majitar, 737136, India

    Rabina Bhujel, Umesh Rizal & Bibhu P. Swain

  2. Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Majitar, Rangpo, 737136, India

    Amit Agarwal

  3. School of Advanced Material Engineering, Kookmin University, Jeongnung-dong, Sungbuk-gu, Seoul, Korea

    Bhabani S. Swain

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  1. Rabina Bhujel
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  2. Umesh Rizal
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  4. Bhabani S. Swain
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  5. Bibhu P. Swain
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Correspondence to Bibhu P. Swain.

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Bhujel, R., Rizal, U., Agarwal, A. et al. Synthesis and Characterization of Silicon Nanowires by Electroless Etching. J. of Materi Eng and Perform 27, 2655–2660 (2018). https://doi.org/10.1007/s11665-018-3179-z

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  • DOI: https://doi.org/10.1007/s11665-018-3179-z

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