Effect of Reaction Parameters on Morphology and Photoluminescence of Intrinsic and Mn-doped ZnS Microspheres Synthesized by Hydrothermal Method

  • T. Inakhunbi ChanuEmail author
  • Dhrubajyoti Samanta
  • Archana Tiwari
  • Somenath Chatterjee


Intrinsic and Manganese (Mn)-doped ZnS microspheres have been synthesized by hydrothermal method. Thiourea and amino acid, and l-histidine have been used as sulfur source and capping agent, respectively. The synthesized materials have been characterized using x-ray diffraction, field emission scanning electron microscopy, photoluminescence (PL) and UV–Vis spectroscopy. The above-said characterizations conveyed the information regarding the crystallinity, existence of microspheres, size and optical properties of synthesized ZnS and Mn-doped ZnS samples. Formation of microspheres of intrinsic and Mn-doped ZnS has been observed when the reaction parameters are kept at 150 °C for 4 h, and similarly, the micropores have been noticed when reaction parameters are kept at 150 °C for 8 h. The PL of ZnS microspheres shows multiple defect emissions. The nature of PL for pure ZnS has been regulated based on reaction parameters. Doping of Mn in the ZnS enhances the PL emission. This study reveals the role of reaction parameters and effect of Mn doping on tuning the morphology and emission behavior of ZnS microspheres.


FESEM Mn-doped ZnS microsphere photoluminescence XRD ZnS microsphere 



The authors sincerely acknowledge the Department of Science & Technology (DST), Government of India, for financial support vide reference no. SR/WOS-A/CS-120/2013 under Women Scientist Scheme to carry out this work.


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Copyright information

© ASM International 2017

Authors and Affiliations

  • T. Inakhunbi Chanu
    • 1
    Email author
  • Dhrubajyoti Samanta
    • 1
  • Archana Tiwari
    • 2
  • Somenath Chatterjee
    • 1
    • 3
  1. 1.Centre for Materials Science and Nanotechnology, Sikkim Manipal Institute of TechnologySikkim Manipal UniversityGangtokIndia
  2. 2.Department of PhysicsSikkim UniversityGangtokIndia
  3. 3.Electronics and Communication Engineering Department, Sikkim Manipal Institute of TechnologySikkim Manipal UniversityGangtokIndia

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