Abstract
We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450°C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500°C. The first formed phase is Ti5Si3 in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500°C, the Ti5Si4 phase and C49 TiSi2 phase formed in the regions close to Ti films and Si substrates, respectively.
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Kim, EH., Ko, DH., Choi, S. et al. Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates. J. Electron. Mater. 28, L20–L23 (1999). https://doi.org/10.1007/s11664-999-0253-1
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DOI: https://doi.org/10.1007/s11664-999-0253-1