Abstract
The formation of triangular-shaped dot-like (TD) structures grown by molecular beam epitaxy on GaAs (311)A substrates patterned with square- and triangular-shaped holes is compared. On substrates patterned with square-shaped holes, TD structures are formed via the pinch-off of two symmetrically arranged {111} planes which develop freely in the regions between the holes on the original substrate surface, while the (111)A sidewalls of the as-etched holes develop a rough morphology during growth. The evolution of the rough (111)A sidewalls is eliminated on substrates patterned with triangular shaped holes resulting in similar TD structures with highly improved uniformity over the entire pattern. Spectrally and spatially resolved cathodoluminescence spectroscopy reveals the lateral variation of the quantum-well confinement energy in the TD structures generating distinct lateral energy barriers between the top portion and the nearby smooth regions with efficient radiative recombination. Formation of TD structures provides a new approach to fabricate three-dimensionally confined nanostructures in a controlled manner.
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Niu, Z., Nötzel, R., Jahn, U. et al. Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs (311)A substrates. J. Electron. Mater. 28, 1–5 (1999). https://doi.org/10.1007/s11664-999-0186-8
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DOI: https://doi.org/10.1007/s11664-999-0186-8