Abstract
Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implanted into GaN at doses of 3–5×1014 cm−2 and annealed at tem peratures up to 1450°C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damageassisted diffusion at 900°C. At higher temperatures, there is no further movement of the Be, for peak annealing temperature durations of 10 s. Effective diffusivities are ≤2×10−13 cm2·s−1 at 1450°C for each of the dopants in GaN.
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Cao, X.A., Wilson, R.G., Zolper, J.C. et al. Redistribution of implanted dopants in GaN. J. Electron. Mater. 28, 261–265 (1999). https://doi.org/10.1007/s11664-999-0025-y
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DOI: https://doi.org/10.1007/s11664-999-0025-y