Abstract
We have investigated the thermal degradation of gate oxide in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon and consequently to the gate oxide occurs upon thermal cycling processes, which results in the dielectric breakdown of the gate oxide. We also found that the Ti-diffusion is suppressed by the employment of the thin (about 5 nm) titanium nitride (TiN) diffusion barrier layer, which consequently improved the reliability characterisitics of gate oxide significantly.
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Kim, H.S., Ko, D.H., Bae, D.L. et al. Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates. J. Electron. Mater. 27, L21–L25 (1998). https://doi.org/10.1007/s11664-998-0418-3
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DOI: https://doi.org/10.1007/s11664-998-0418-3