Abstract
The room temperature infrared reflectance of low doped SiC epi-films, both 4H and 6H polytypes, deposited by chemical vapor deposition on highly doped SiC substrates has been measured. The epi-film doping levels are in the 1015 cm−3 range while the substrate doping levels are in the 1018 to 1019 cm−3 range. Interference fringes from the epi-films are often observed in the frequency region below the reststrahl band in SiC (200–600 cm−1) and they can be used to determine the thickness of these epi-films. The fringes arise due to the difference in free carrier concentration between the epi-film and substrate which causes differences in their frequency dependent dielectric functions. The epi-film thickness determinations were made by comparison of the measured infrared reflectance spectra to calculated spectra based on a frequency dependent dielectric function modeled with Lorentz oscillators using only bulk input parameters. The effects of film and substrate anisotropy and off normal incidence are included in the calculation.
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Macmillan, M.F., Henry, A. & Janzén, E. Thickness determination of low doped SiC epi-films on highly doped SiC substrates. J. Electron. Mater. 27, 300–303 (1998). https://doi.org/10.1007/s11664-998-0404-9
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DOI: https://doi.org/10.1007/s11664-998-0404-9