Abstract
This paper presents a study of the rectifying properties of heavily doped polycrystalline silicon (polysilicon) on 4H silicon carbide (4H-SiC). Current properties and barrier heights were found using analysis of the heterojunction. This revealed that Schottky analysis would be valid for the large barrier height devices. Isotype and an-isotype devices were fabricated on both p-type and n-type SiC and the electrical characteristics were investigated using capacitance vs voltage measurements, current vs voltage measurements (I-V), and temperature I-V measurements. Extraction of the barrier height, built-in potential, and Richardson constant were made and then compared to theoretical values for the heterojunction. Temperature I-V measurements demonstrated that the current transport mechanism is thermionic emission, confirming the validity of the Schottky diode model. The I-V characteristics show near ideal diode rectifying behavior and the capacitance-voltage characteristics show ideal junction space charge modulation for all polysilicon/SiC combinations. These experimental results match well with heterojunction band-offset estimated barrier heights and demonstrate that the barrier height of the polysilicon/4H SiC interface may be controlled by varying the polysilicon doping type.
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References
A. Itoh, O. Takemura, T. Kimoto and H. Matsunami, 6th SiC and Related Materials Conf. Proc., (1995), p. 685.
M. Karlsteen, Q. Wahab, O. Nur, M. Willander and J.E. Sundgren, 5th SiC and Related Materials Conf. Proc., (1993), p. 557.
E.H. Chen, T.P. Chin, J.M. Woodall and M.S. Lundstrom, Appl. Phys. Lett., accepted for publication (1997).
K.J. Schoen, J.M. Woodall, A. Goel and C. Venkatraman, J. Electron. Mater. 26, (1997).
J.P. Henning, K.J. Schoen, M.R. Melloch, J.M. Woodall, J.A. Cooper, Jr., 39th Electron Material Conf., June 26, 1997; J. Electron. Mater. 26 (7) 27 (1997).
M. Bhatnagar, B.J. Baliga, H.R. Kirk and G.A. Rozgonyi, IEEE Trans. on Elec. Dev. 43, 150 (1996).
M.S. Lundstrom, Solid-State Electron. 27 (5), 491 (1984).
S.M. Sze, Physics of Semiconductor Devices, (New York: John Wiley & Sons).
A. Itoh, T. Kimoto and H. Matsunami, IEEE Elec. Dev. Lett. 16, 280 (1995).
N. Lundberg, P. Tägström, U. Jansson and M. Östling, 6th SiC and Related Materials Conf. Proc. (1995), p. 677.
E.H. Roderick, Metal-Semiconductor Contact, (Oxford University Press, 1978).
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Henning, J.P., Schoen, K.J., Melloch, M.R. et al. Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions. J. Electron. Mater. 27, 296–299 (1998). https://doi.org/10.1007/s11664-998-0403-x
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DOI: https://doi.org/10.1007/s11664-998-0403-x