Abstract
Contacts consisting of various single layer metals to n-type GaN have been formed and characterized. The current-voltage characteristics were measured for 17 different metals (Sc, Hf, Zr, Ag, Al, V, Nb, Ti, Cr, W, Mo, Cu, Co, Au, Pd, Ni, and Pt) deposited on the same epitaxial growth layer. The barrier height, ideality factor, breakdown voltage, and effective Richardson coefficients were measured from those metals which exhibited strong rectifying behavior. The barrier heights for these metal contacts were measured using current-voltage-temperature and capacitance-voltage techniques. It was found that an increase in metal work function correlated with an increase in the barrier height. The surface state density of GaN was approximated to be very similar to CdS and almost a factor of ten less than GaAs.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P. Hacke, T. Detchprohm, K. Hiramatsu and N. Sawaki, Appl. Phys. Lett. 63, 2676 (1993).
S.C. Binari, H.B. Dietrich,G. Kelner, L.B. Rowland, K. Doverspike and D.K. Gaskill, Electron. Lett. 30, 909 (1994).
J.D. Guo, M.S. Feng, R.J. Guo, F.M. Pan and C.Y. Chang, Appl. Phys. Lett. 67, 2657 (1995).
A.T. Ping, A.C. Schmitz, M. Asif Khan and I. Adesida, Electron. Lett. 32, 68 (1996).
E.V. Kalinina, N.I. Kuznetsov, V.A. Dmitriev, K.G. Irvine and C.H. Carter, Jr., J. Electron. Mater. 25, 831 (1996).
L. Wang, M.I. Nathan, T-H. Lim, M.A. Khan and Q. Chen, Appl. Phys. Lett. 68, 1267 (1996).
A.C. Schmitz, A.T. Ping, M. Asif Khan, Q. Chen, J.W. Yang and I. Adesida, Semicond. Sci. Technol. 11, 1464 (1996).
Z. Fan, S.N. Mohammad, W. Kim, Ö. Aktas, A.E. Botchkarev, K. Suzue and H. Morkoç, J. Electron. Mater. 25, 1703 (1996).
J.D. Guo, F.M. Pan, M.S. Feng, R.J. Guo, P.F. Chou and C.Y. Chang, J. Appl. Phys. 80, 1623 (1996).
A.C. Schmitz, A.T. Ping, M. Asif Khan, Q. Chen, J.W. Yang and I. Adesida, Electron. Lett. 32, 1832 (1996).
M.T. Hirsch, K.J. Duxstad and E.E. Haller, Electron. Lett. 33, 95 (1997).
Q.Z. Liu, L.S. Yu, S.S. Lau, J.M. Redwing, N.R. Perkins and T.F. Kuech, Appl. Phys. Lett. 70, 1275 (1997).
D.R. Lide, CRC Handbook of Chemistry and Physics (Boca Raton, FL: CRC, 1992), p. 12.
D.K. Schroder, Semiconductor material and device characterization (New York: John Wiley & Sons, 1990), p. 153.
A.M. Goodman, J. Appl. Phys. 34, 329 (1963).
A.S. Barker and M. Idegems, Phys. Rev. B 7, 743 (1973).
J.S. Foresi and T.D. Moustakas, Appl. Phys. Lett. 62, 2859 (1993).
S. Kurtin, T.C. McGill and C.A. Mead, Phys. Rev. Lett. 22, 1433 (1969).
S.C. Binari, K. Doverspike, G. Kelner, H.B. Dietrich and A.E. Wickenden, Solid State Electron. 41, 177 (1997).
A.M. Cowley and S.M. Sze, J. Appl. Phys. 36, 3212 (1965).
S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (New York: Wiley, 1981), p. 245.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Schmitz, A.C., Ping, A.T., Khan, M.A. et al. Metal contacts to n-type GaN. J. Electron. Mater. 27, 255–260 (1998). https://doi.org/10.1007/s11664-998-0396-5
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-998-0396-5