Abstract
Mg- and Si-doped GaN and AlGaN films were grown by metalorganic chemical vapor deposition and characterized by room-temperature photoluminescence and Hall-effect measurements. We show that the p-type carrier concentration resulting from Mg incorporation in GaN:Mg films exhibits a nonlinear dependence both on growth temperature and growth pressure. For GaN and AlGaN, n-type doping due to Si incorporation was found to be a linear function of the silane molar flow. Mg-doped GaN layers with 300K hole concentrations p ∼2×1018 cm−3 and Si-doped GaN films with electron concentrations n∼1×1019 cm−3 have been grown. N-type Al0.10Ga0.90N:Si films with resistivities as low as p ∼6.6×10−3 Ω-cm have been measured.
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Eiting, C.J., Grudowski, P.A. & Dupuis, R.D. P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition. J. Electron. Mater. 27, 206–209 (1998). https://doi.org/10.1007/s11664-998-0388-5
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DOI: https://doi.org/10.1007/s11664-998-0388-5