Abstract
This paper reports on a process to fabricate single-crystal 3C-SiC on SiO2 structures using a wafer bonding technique. The process uses the bonding of two polished polysilicon surfaces as a means to transfer a heteroepitaxial 3C-SiC film grown on a Si wafer to a thermally oxidized Si wafer. Transfer yields of up to 80% for 4 inch diameter 3C-SiC films have been achieved. Homoepitaxial 3C-SiC films grown on the 3C-SiC on SiO2 structures have a much lower defect density than conventional 3C-SiC on Si films.
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Vinod, K.N., Zorman, C.A., Yasseen, A.A. et al. Fabrication of low defect density 3C-SiC on SiO2 structures using wafer bonding techniques. J. Electron. Mater. 27, L17–L20 (1998). https://doi.org/10.1007/s11664-998-0207-z
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DOI: https://doi.org/10.1007/s11664-998-0207-z