Dependence of activation energy of mass transport limited region on the photospectrum of photons participating in rapid photothermal assisted chemical vapor deposition

Abstract

In this letter, we demonstrate the importance of high energy photons (λ<800nm) in reducing the activation energy and providing higher growth rates and low defect densities for the materials deposited by rapid photothermal processing assisted chemical vapor deposition (CVD). The dependence of growth rate, structural properties, and electrical properties of Y₂O₃/Si structure on the photospectrum reaching at the Y₂O₃/Si interface has been studied. The observation that high energy photons result in the reduction of activation energy of mass transport limited region has direct advantage of depositing various electronic materials by CVD at low processing temperatures.