Abstract
Orientation dependent etching of photolithographically patterned \((\bar 1\bar 1\bar 1)\) GaP was investigated using solutions of HCl:CH3COOH:H2O2. The pattern was prepared using standard ultraviolet lithography and was a two-dimensional grid with an 18 µm repeat, consisting of 15 µm squares separated by 3 µm spaces. The mask sides were aligned along the \([0\bar 11]\) and \([\bar 211]\) directions. Under appropriate etching conditions, high quality arrays of pyramids were prepared. These pyramids were defined by \((\bar 100)\), \((0\bar 10)\) and \((00\bar 1)\) facets. It was shown that the etching process depended on the degree of solution aging after initial mixing. For a freshly prepared solution, the etching rate showed an inverse dependence on time. For short etching times (below 5 min), an intermediate etching profile was followed, while for long times (greater than 5 min) etching was kinetically controlled. We demonstrated that controlled etching at extremely low rates (0.1–0.5 µm/min) is feasible with this new approach.
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Berdinskikh, T., Ruda, H.E., Mei, X.Y. et al. A kinetic study of structured surface relief patterning of GaP \((\bar 1\bar 1\bar 1)\) . J. Electron. Mater. 27, 114–121 (1998). https://doi.org/10.1007/s11664-998-0200-6
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DOI: https://doi.org/10.1007/s11664-998-0200-6