Abstract
Thin films of InxGa1−xAs (0<x<0.012) on GaAs (001) were grown by metalorganic vapor phase epitaxy using triisopropylindium, triisobutylgallium, and tertiarybutylarsine. The effect of the process conditions, temperature, and V/III ratio on the film quality was studied using high resolution x-ray diffraction, scanning tunneling microscopy, and Hall measurements. High quality films were grown at temperatures as low as 475 °C and at a V/III ratio of 100. However, under these conditions, a change in growth mode from step flow to two-dimensional nucleation was observed.
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Han, B.K., Li, L., Kappers, M.J. et al. Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources. J. Electron. Mater. 27, 81–84 (1998). https://doi.org/10.1007/s11664-998-0193-1
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DOI: https://doi.org/10.1007/s11664-998-0193-1