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Thick crack-free CaF2 epitaxial layer on GaAs (100) substrate by molecular beam epitaxy

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Abstract

The crystallographic orientation of low temperature (LT) grown CaF2 on GaAs (100) substrates is investigated. LT epitaxial (100) CaF2 layers are obtained on a thin (100) oriented CaF2 template at growth temperatures down to room temperature. This makes it possible to grow crack-free CaF2 (100) using a multiple-temperature-growth scheme at any desired temperature. The resulting CaF2 layers, with thickness up to 680 nm, can withstand temperature cycling from RT to 650°C without cracking. Based on these results, a four pair Ga0.5Al0.5As/CaF2 quarter-wavelength Bragg reflector was fabricated with center wavelength at 880 nm. The reflector, with a total CaF2 thickness of 615 nm, shows broadband high reflectivity with a crack-free surface. This crack-free surface can then be overgrown with further device layers.

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Author notes

  1. Z. Shi

    Present address: The University of Oklahoma, USA

Authors and Affiliations

  1. Swiss Federal Institute of Technology, Institute of Quantum Electronics, ETH Hönggerberg, CH-8093, Zurich, Switzerland

    Z. Shi, H. Zogg & U. Keller

  2. IQE, Swiss Federal Institute of Technology, ETH-Teil Technopark, CH-8005, Zurich, Switzerland

    H. Zogg

Authors
  1. Z. Shi
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  2. H. Zogg
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  3. U. Keller
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Shi, Z., Zogg, H. & Keller, U. Thick crack-free CaF2 epitaxial layer on GaAs (100) substrate by molecular beam epitaxy. J. Electron. Mater. 27, 55–58 (1998). https://doi.org/10.1007/s11664-998-0187-z

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  • DOI: https://doi.org/10.1007/s11664-998-0187-z

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