Skip to main content
SpringerLink
Log in

Deep centers in undoped semi-insulating InP

  • Letters
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Undoped semi-insulating (SI) InP samples, subjected to one-step and multi-step wafer annealing, and lightly and normally Fe-doped SI InP samples without annealing have been characterized by thermally stimulated current (TSC) spectroscopy. A dominant deep center at 0.63 eV is found in all samples and is undoubtedly due to iron. Two prominent TSC traps, Tb (0.44 eV) and Td (0.33 eV), found in undoped SI InP, are thought to be related to the phosphorus antisite PIn, and traps at low temperatures, like Te* (0.19 eV), to the phosphrus vacancy VP.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Seidl, F. Mosel, J. Friedrich, U. Kretzer and G. Muller, Mater. Sci. & Engr. B 21, 321 (1993).

    Article  Google Scholar 

  2. D.E. Holmes, R.G. Wilson and P.W. Yu, Appl. Phys. 52, 3396 (1981).

    Article  CAS  Google Scholar 

  3. K. Kainosho, H. Shimakura, H. Yamamoto, T. Inoue and O. Oda, Proc. First Intl. Conf. InP and Related Materials, (Oklahoma, 1989), p. 312.

  4. K. Kainosho, H. Shimakura, H. Yamamoto and O. Oda, Appl. Phys. Lett. 59, 932 (1991).

    Article  CAS  Google Scholar 

  5. D.C. Look, Z.-Q. Fang, J.W. Hemsky and P. Kengkan, Phys. Rev. B 55, 2214 (1997).

    Article  CAS  Google Scholar 

  6. S. Kuisma, K. Saarinen, P. Hautojarvi, Z-Q. Fang and D.C. Look, J. Appl. Phys. 81, 3512 (1997).

    Article  CAS  Google Scholar 

  7. Z.-Q. Fang, D.C. Look and J.H. Zhao, Appl. Phys. Lett. 61, 589 (1992).

    Article  CAS  Google Scholar 

  8. R. Fornari, B. Santic and U. Desnica, Proc. 4th Intl. Conf. InP and Related Materials, 1992, Newport, USA (New York:IEEE), p. 511.

    Google Scholar 

  9. K. Kuriyama, K. Tomizawa, M. Kashiwakura and K. Yokoyama, J. Appl. Phys. 76, 3552 (1994).

    Article  CAS  Google Scholar 

  10. M. Uchida, K. Kainosho, M. Ohta and O. Oda, J. Electron. Mater. 27, 8 (1998).

    CAS  Google Scholar 

  11. T. Takanohashi and K. Nakajima, J. Appl. Phys. 65, 3933 (1989).

    Article  CAS  Google Scholar 

  12. D. C. Look, Semiconductors and Semimetals, 19, ed. R.K. Willardson and A.C. Beer (New York: Academic Press, 1983), p. 75.

    Google Scholar 

  13. F.X. Zach, J. Appl. Phys. 75, 7894 (1994).

    Article  CAS  Google Scholar 

  14. Not published.

  15. G. Hirt, T. Mono and G. Muller, Mater. Sci. and Engr. B 28, 101 (1994).

    Article  CAS  Google Scholar 

  16. P. Dreszer, W.M. Chen, D. Wasik, R. Leon, W. Walukiewicz, B.W. Liang, C.W. Tu and E.R. Weber, J. Electron. Mater. 22, 1487 (1993).

    CAS  Google Scholar 

  17. B.W. Liang, P.Z. Lee, D.W. Shih and C.W. Tu, Appl. Phys. Lett. 60, 2104 (1992).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Physics Department, Wright State University, 45435, Dayton, OH

    Z. -Q. Fang & D. C. Look

  2. Materials and Components Laboratory, Japan Energy Corporation, 3-17-35, Niizo-Minami, Toda, 335, Saitama, Japan

    M. Uchida, K. Kainosho & O. Oda

Authors
  1. Z. -Q. Fang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. C. Look
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. Uchida
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. K. Kainosho
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. O. Oda
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Fang, Z.Q., Look, D.C., Uchida, M. et al. Deep centers in undoped semi-insulating InP. J. Electron. Mater. 27, L68–L71 (1998). https://doi.org/10.1007/s11664-998-0152-x

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-998-0152-x

Key words

Search

Navigation