Abstract
To reduce cost and enhance reliability for microelectronics applications, a complete understanding of the thermosonic bonding process is required. In particular, the question of whether melting, diffusion, or significant heating occurs along the interface during friction has often been raised. We present results obtained with a new device based on thermoelectric temperature measurements to determine the temperature at the bond interface. In addition to the temperature information, the data characterizes the bonding process in real time on a micrometer scale. The basic principle of the developed apparatus is temperature measurement by an Au-Ni thermocouple fixed within the inside chamfer of a bonding capillary. Different bond substrates with high and low bond contact quality have been investigated. The thermoelectric temperature measurements very precisely determines the bonding behavior of the bond pads. A few nanometers surface contamination on a bond pad significantly reduces the temperature rise at the bond interface and therefore impairs bondability of the substrate. These results demonstrate the sensitivity and accuracy of the measurement principle. The apparatus is a powerful tool to measure the tribology of the bond system and to characterize the bondability of different bond pads.
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Schneuwly, A., Gröning, P., Schlapbach, L. et al. Bondability analysis of bond pads by thermoelectric temperature measurements. J. Electron. Mater. 27, 1254–1261 (1998). https://doi.org/10.1007/s11664-998-0079-2
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DOI: https://doi.org/10.1007/s11664-998-0079-2