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Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy

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Abstract

We report the determination of band offset ratios, using photoluminescence excitation measurements, for GaInP/GaAs and AlInP/GaAs quantum wells grown by gas-source molecular beam epitaxy. To reduce the uncertainty related to the intermixing layer at heterointerfaces, the residual group-V source evacuation time was optimized for abrupt GalnP/GaAs (AlInP/GaAs) interfaces. Based upon thickness and composition values determined by double-crystal x-ray diffraction simulation and cross-sectional transmission electron microscopy, the transition energies of GalnP/GaAs and AlInP/GaAs quantum wells were calculated using a three-band Kane model with varying band-offset ratios. The best fit of measured data to calculated transition energies suggests that the valence-band offset ratio (γ band discontinuity) was 0.63 ± 0.05 for GalnP/GaAs and 0.54 ± 0.05 for AlInP/GaAs heterostructures. This result showed good agreement with photoluminescence data, indicating that the value is independent of temperature.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Microelectronics Laboratory Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, 61801, Urbana, IL

    H. C. Kuo & G. E. Stillman

  2. Lucent Technology, Bell Laboratories, 700 Mountain Avenue, 07974, Murray Hill, NJ

    J. M. Kuo & Y. C. Wang

  3. Department of Material Science and Engineering, Material Research Laboratory University of Illinois at Urbana-Champaign, 61801, Urbana, IL

    C. H. Lin & H. Chen

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  1. H. C. Kuo
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  2. J. M. Kuo
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  3. Y. C. Wang
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  4. C. H. Lin
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  5. H. Chen
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  6. G. E. Stillman
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Kuo, H.C., Kuo, J.M., Wang, Y.C. et al. Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy. J. Electron. Mater. 26, 944–948 (1997). https://doi.org/10.1007/s11664-997-0279-1

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  • DOI: https://doi.org/10.1007/s11664-997-0279-1

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