Abstract
The temperature dependence of refractive index of tantalum pentoxide (Ta2O5) dielectric films was investigated experimentally. The films were formed by a magnetron radio frequency sputtering technique on the Si substrates. After deposition, the film was fabricated into an antiresonant reflecting optical waveguide using a novel wet etching technique. The thermal variation of refractive index of Ta2O5 was characterized by measuring the index-vs-temperature coefficient of the antiresonant reflecting optical waveguide with a Mach-Zehnder interferometry system. The measured result was 2.3 × 10-61/K at 632.8 nm from 298 to 328K. This result indicates that index-vs-temperature coefficient of the Ta2O5 dielectric films is about ten times less than those of conventional III-V semiconductors.
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Chu, A.K., Lin, H.C. & Cheng, W.H. Temperature dependence of refractive index of Ta2O5 Dielectric Films. J. Electron. Mater. 26, 889–892 (1997). https://doi.org/10.1007/s11664-997-0269-3
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DOI: https://doi.org/10.1007/s11664-997-0269-3