Abstract
Hall mobilities and resistance area products RoA of infrared diodes in epitaxial Pb1-xSnxSe layers on CaF2 covered Si(111) substrates were correlated with threading dislocation densities p. The low temperature saturation Hall mobilities were entirely determined by p and proportional to their mean spacing 1/ √ρ. For the photodiodes, the R0A values at low temperatures were inversely propor-tional to ρ. A model where each dislocation in the active area of the diodes causes a shunt resistance correctly describes the results, the value of this resistance for a single dislocation is 1.2 GΩ for PbSe at 85K. The dislocation densities were in the 2 × 107 to 5 × 108cm-2 range for the 3-4 μm thick as-grown layers. Higher R0A values are obtainable by lowering these densities by thermal annealing, which sweeps the threading ends of the misfit dislocations to the edges of the sample.
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References
H. Zogg, S. Blunier, A. Fach, C. Maissen, P. Müller, S. Teodoropol, V. Meyer, G. Kostorz, A. Dommann and T. Richmond, Phys. Rev. B 50, 10801 (1994).
H. Zogg, S. Blunier, T. Hoshino, C. Maissen, J. Masek and A.N. Tiwari, IEEE Trans. Electron Dev. 38, 1110 (1991).
H. Zogg, A. Fach, J. John, J. Masek, P. Müller, C. Paglino and S. Blunier, Opt. Eng. 34, 1964 (1995).
Alexander Fach, PhD Thesis, ETH Zürich Nr. 11682 (1996).
“Microstrip 2001”-solution from Olin Hunt, etching time up to 4 min at 55°C.
A. Fach, J. John, J. Masek, P. Müller, C. Paglino and H. Zogg , World Scientific 1995, ed. R.L. Aulombard, (Int. Conf. on Compound Semiconductor Heteroepitaxy, Montpellier, F, July 1995), p. 294.
C. Paglino, PhD Thesis, ETH Zürich Nr. 11741 (1996).
R.S. Allgaier, Proc. SPIE 285, 2 (1981).
For a review see e.g. A. Rogalski, Infrared Photon Detectors (Bellingham, WA: SPIE Optical Engineering Press, 1995).
C. Paglino, A. Fach, J. John, P. Müller, H. Zogg and D. Pescia J. Appl. Phys. 80, 7138 (1996).
R.S. List, J. Vac. Sei. Technol. B 10, 1651 (1992).
S.M. Johnson, D.M. Rhiger, J.P. Rosbeck, J.M. Peterson, S.M. Taylor and M.E. Boyd, J. Vac. Sei. Technol. B 10, 1499 (1992).
P. Müller, H. Zogg, A. Fach, J. John, C. Paglino, A.N. Tiwari, M. Krejci, and G. Kostorz, Phys. Rev. Lett. 78, 3007 (1997).
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Fach, A., John, J., Müller, P. et al. Material properties of Pb1-xSnxSe epilayers on Si and their correlation with the performance of infrared photodiodes. J. Electron. Mater. 26, 873–877 (1997). https://doi.org/10.1007/s11664-997-0266-6
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DOI: https://doi.org/10.1007/s11664-997-0266-6