Abstract
A scanning probe microscope was used to observe thermally induced deformation of 1 μm thick Cu/Ta/polyimide test structures on Si. Relative height changes in arrays of parallel Cu and polyimide lines of various aspect ratios were examined in air at room temperature before and after a 25-350-25°C thermal cycle conducted in gettered nitrogen. Grain elevation and hillock formation at grain boundaries were observed on the Cu surface as a result of the thermal cycling. It was also observed that significant sliding occurs at the Cu/Ta interface with 1 μm wide Cu lines. Less or no sliding was observed at the interface with 10 μm wide Cu lines.
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Zhmurkin, D.V., Gross, T.S. & Buchwalter, L.P. Interfacial sliding in Cu/Ta/polyimide high density interconnects as a result of thermal cycling. J. Electron. Mater. 26, 791–797 (1997). https://doi.org/10.1007/s11664-997-0253-y
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DOI: https://doi.org/10.1007/s11664-997-0253-y