Abstract
We report on the design, fabrication, and performance of CdZnTe gamma-ray detectors with a new P-I-N structure for spectroscopic applications. Highpressure and conventional vertical-Bridgman CdZnTe crystals were used for detector fabrication. P and n layers were deposited by thermal evaporation, and by optimizing the deposition conditions we achieved low leakage current (approximately 15 nA at 1000 V) and good performance. Spectral response data at high bias voltages showed improved energy resolution and peak-to-valley ratios for 241Am and 57Co compared to metal-semiconductor-metal detectors.
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Sudhaesanan, R., Vakerlis, G.D. & Karam, N.H. Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design. J. Electron. Mater. 26, 745–749 (1997). https://doi.org/10.1007/s11664-997-0226-1
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DOI: https://doi.org/10.1007/s11664-997-0226-1