Abstract
Spectroscopic ellipsometry and photoreflectance measurements on CdTe/GaAs strained heterostructures grown by moleculclr beam epitaxy were carried out to investigate the effect of the strain and the dependence of the lattice parameter on the CdTe epitaxial layer thicknesses. Compressive strains exist in CdTe layers thinner than 2 µm. As the strain increases, the value of the critical-point energy shift increases linearly. These results indicate that the strains in the CdTe layers grown on GaAs substrates are strongly dependent on the CdTe layer thickness.
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References
Weisbuch and B. Vinter, Quantum Semiconductor Structures (Boston: Academic Press, 1991).
C. Hsu, S. Sivananthan, X. Chu and J.P. Faurie, Appl. Phys. Lett. 48, 908 (1986).
R.N. Bicknell, R.W. Yanka, N.C. Giles, J.F. Schetzina, T.J. Magee, C. Leung and H. Kawayoshi, Appl. Phys. Lett. 44,313 (1984).
Zhonghai Yu, S.G. Hofer, N.C. Giles and T.H. Myers, Phys. Rev. B 51, 13789 (1995).
D.J. Olego, J. Petruzzello, S.K. Ghandhi, N.R. Taskar and I.B. Baht, Appl. Phys. Lett. 51, 127 (1987).
L. Svob, Y. Marfaing, B. Clerjaud, D. Cote, A. Lebkiri and R. Druilhe, J. Cryst. Growth 159, 72 (1996).
G. Bahir, V. Ariel, V. Garber, D. Rosenfeld and A. Sher, Appl. Phys. Lett. 65, 2725 (1994).
H. Tatsuoka, H. Kuwabara, Y. Nakanishi and H. Fujiyasu, J. Appl. Phys. 68, 4592 (1990).
A. Bourret and P.H. Fuoss, Appl. Phys. Lett. 61,1034 (1992).
A. Bourret, P. Fuoss, G. Feuillet and S. Tatarenko, Phys. Rev. Lett. 70, 311 (1993).
G. Bratina, L. Sorba, A. Antonini, G. Ceccone, R. Nicolini, G. Biasiol, A. Franciosi, J.E. Angelo and W.W. Gerberich, Phys. Rev. B 48, 8899 (1993).
D. Coquillat, F. Hamdani, J.P. Lascaray, O. Briot and R.L. Aulombard, Phys. Rev. B 47, 10489 (1993).
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Han, M.S., Kang, T.W., Leem, J.H. et al. Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy. J. Electron. Mater. 26, 507–510 (1997). https://doi.org/10.1007/s11664-997-0185-6
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DOI: https://doi.org/10.1007/s11664-997-0185-6