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Low-Temperature-Sintered Nano-Ag Film for Power Electronics Packaging

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Abstract

Nano-Ag paste sintering has attracted much attention for high-power electronics packaging owing to its excellent electrical conductivity, thermal conductivity, and oxidation resistance. However, it requires printing and pre-heating before the die attach process, and the organics in the paste do not evaporate easily for large-area die attachment. In this work, a nano-Ag film (~ 100 μm thickness) with only 2.1% organics is developed to realize low-temperature bonding, which is compatible with the current sintering bonding process. The optimized preparation parameters of the nano-Ag films was optimized as 180°C-5 min. The characteristics and sintering mechanism of nano-Ag film are discussed. The results showed that the micro/nanostructure on the surface of nano-Ag film with a small amount of organic material is responsible for the low-temperature sintering ability, which realized 24.01 MPa shear strength at 200°C. The fracture was analyzed and failure modes are discussed. The easy-to-use features and low-temperature sintering ability make the nano-Ag film a promising die-attach material with high reliability.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (52205324) and the R&D Program of the Beijing Municipal Education Commission (KZ202210005005).

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Authors and Affiliations

  1. Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China

    Limin Ma, Yuchen Wang, Qiang Jia, Yishu Wang, Dan Li & Fu Guo

  2. School of Mechanical Engineering and Automation, Beihang University, Beijing, 100191, China

    Hongqiang Zhang

  3. Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing, 100084, China

    Guisheng Zou

  4. College of Robotics, Beijing Union University, Beijing, 100101, China

    Fu Guo

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  1. Limin Ma
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Ma, L., Wang, Y., Jia, Q. et al. Low-Temperature-Sintered Nano-Ag Film for Power Electronics Packaging. J. Electron. Mater. 53, 228–237 (2024). https://doi.org/10.1007/s11664-023-10763-6

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