A hydrothermal process was used to grow titanium dioxide (TiO2) nanorods on p-type silicon substrates, and a dip-coating process was then used to fabricate TiO2 thin film–nanorod hybrid structures. The nanorod-like structures were obtained for processing temperatures of 160°C and 180°C. The thin films were dip-coated on the nanorods with a withdrawal speed of 1 cm/min. Afterwards, thin film–nanorod hybrid structures were annealed at 500°C for 1 h. Morphological characterization carried out by scanning electron microscopy (SEM) studies confirmed the formation of nanorods. XRD and Raman studies confirmed the presence of anatase and rutile phases of TiO2-based hybrid structures. The oxide charge density (Qox) and the interface charge density (Dit) of the hybrid structures were measured from the capacitance–voltage (C–V) plot. Qox and Dit were calculated as 2.29 × 1012 cm−2 and 0.89 × 1012 eV−1 cm−2, respectively, for a temperature of 180°C and growth time of 60 min. The resistive switching properties of TiO2-based hybrid structures showed a good on/off ratio, and hence the hybrid structure-based device can be considered a suitable element for memory devices.
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The authors are thankful to Prof. Pitamber Mahanandia, NIT Rourkela for the resistive switching measurements.
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Roy, S., Tripathy, N., Pradhan, D. et al. Fabrication and Characterization of TiO2 Thin Film–Nanorod-Based Hybrid Structures for Memristor Applications. J. Electron. Mater. (2023). https://doi.org/10.1007/s11664-023-10733-y