Abstract
The introduction rates of electrically active radiation defects \(\Delta N_{{{\text{def}}}} /\Delta \Phi\) were studied as a function of 15.5 MeV energy proton radiation fluence \(\left( \Phi \right)\) in n-type and p-type Si semiconductor crystals. The concentration of electrically active radiation defects \( N_{{{\text{def}}}}\) was determined as the difference between the charge carrier concentration before \(n_{0}\) and after \(n\left( \Phi \right) \) irradiation, at room temperature. It was demonstrated that the concentration of electrically active radiation defects in silicon crystals produced by proton irradiation can be described by an empirical exponential function. The experimental results show that the introduction rate of electrically active radiation defects depends on the initial sample parameters, and during the initial phase of irradiation by protons it is significantly higher than that for 3.5 MeV energy electron irradiation. It was shown that samples with a low introduction rate of radiation defects are more resistant to the effects of particle irradiation. The charge carrier mobility in both n-type and p-type silicon crystals changes slightly as a result of proton irradiation, in contrast to the significant decreases observed under conditions of electron irradiation. In the case of proton irradiation, the resistivity of n-type and p-type silicon crystals increases exponentially with the level of radiation fluence.
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Abbreviations
- SRIM:
-
Stopping and Range of Ions in Matter
- NIEL:
-
Non-ionizing energy loss
- CANDLE:
-
Center for the Advancement of Natural Discoveries using Light Emission
References
P. Siffert, and E.F. Krimmel, Silicon: Evolution and Future of a Technology, 1st ed., (Berlin, Heidelberg: Springer, 2004).
S. Babaee and S.B. Ghozati, The study of 1 MeV electron irradiation induced defects in N- and P-type monocrystalline silicon. Radiat. Phys. Chem. 141, 98 (2017). https://doi.org/10.1016/j.radphyschem.2017.06.012.
H. Baek, G. Kwon, J. Nam, S. Kim, H. Kim, B.-G. Park, J. Lee, M. Kang, G.M. Sun, and C. Shin, Microwave photoconductance decay measurements of n- and p-type silicon irradiated with neutrons and protons. Radiat. Phys. Chem. 185, 109501 (2021). https://doi.org/10.1016/j.radphyschem.2021.109501.
K.D. Bartlett, D.D. Coupland, D.T. Beckman, and K.E. Mesick, Proton irradiation damage and annealing effects in ON semiconductor J-series silicon photomultipliers. Nucl. Instrum. Methods Phys. Res. Sect. A 969, 163957 (2020). https://doi.org/10.1016/j.nima.2020.163957.
C. Bebek, D. Groom, S. Holland, A. Karcher, W. Kolbe, J. Lee, M. Levi, N. Palaio, B. Turko, M. Uslenghi, M. Wagner, and G. Wang, Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon. IEEE Trans. Nucl. Sci. 49, 1221 (2002). https://doi.org/10.1109/TNS.2002.1039641.
Y.B. Khormizi, K.R. Ebrahim Saraee, and G. Aslani, An analysis of 30 MeV proton irradiation and annealing effects on silicon NPN power transistors. Iran. J. Sci. Technol. Trans. A Sci. 43, 2613 (2018). https://doi.org/10.1007/s40995-018-0592-y.
H. Kauppinen, C. Corbel, K. Skog, K. Saarinen, T. Laine, P. Hautojärvi, P. Desgardin, and E. Ntsoenzok, Divacancy and Resistivity profiles in n-type Si implanted with 1.15-MeV protons. Phys. Rev. B 55, 9598 (1997). https://doi.org/10.1103/physrevb.55.9598.
V.V. Emtsev, A.M. Ivanov, V.V. Kozlovski, A.A. Lebedev, G.A. Oganesyan, N.B. Strokan, and G. Wagner, Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of n-type. Semiconductors 46, 456 (2012). https://doi.org/10.1134/S1063782612040069.
I. Pintilie, G. Lindstroem, A. Junkes, and E. Fretwurst, Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors. Nucl. Instrum. Methods Phys. Res. Sect. A 611, 52 (2009). https://doi.org/10.1016/j.nima.2009.09.065.
R. Radu, E. Fretwurst, R. Klanner, G. Lindstroem, and I. Pintilie, Radiation damage in n-type silicon diodes after electron irradiation with energies between 1.5 MeV and 15 MeV. Nucl. Instrum. Methods Phys. Res. Sect. A 730, 84 (2013). https://doi.org/10.1016/j.nima.2013.04.080.
T. Hisamatsu, O. Kawasaki, S. Matsuda, and K. Tsukamoto, Photoluminescence study of silicon solar cells irradiated with large fluence electrons or protons. Radiat. Phys. Chem. 53, 25 (1998). https://doi.org/10.1016/j.nima.2013.04.080.
I. Kovačević, and B. Pivac, Defect production in γ-irradiated silicon at different temperatures. Vacuum 80, 223 (2005). https://doi.org/10.1016/j.vacuum.2005.08.002.
H. Yeritsyan, A. Sahakyan, N. Grigoryan, V. Harutyunyan, V. Arzumanyan, V. Tsakanov, B. Grigoryan, G. Amatuni, and C.J. Rhodes, Introduction rates of radiation defects in electron irradiated semiconductor crystals of n-Si and n-GaP. Radiat. Phys. Chem. 176, 109056 (2020). https://doi.org/10.1016/j.radphyschem.2020.109056.
C. Leroy, and P.-G. Rancoita, Particle interaction and displacement damage in silicon devices operated in radiation environments. Rep. Prog. Phys. 70, 493 (2007).
M. Kuhnke, E. Fretwurst, and G. Lindstroem, Defect generation in crystalline silicon irradiated with high energy particles. Nucl. Instrum. Methods Phys. Res. Sect. B 186, 144 (2002).
I. Smirnov, I. Dyachkova, and E. Novoselova, High resolution X-ray diffraction study of proton irradiated silicon crystals. Mod. Electron. Mater. 2, 29 (2016).
Y. Funtikov, L. Dubov, Y. Shtotsky, and S. Stepanov, Radiation-induced defects in Si after high dose proton irradiation. Defect Diffus. Forum 373, 209 (2017).
V.V. Kozlovski, A.E. Vasilev, and A.A. Lebedev, Effect of recoil atoms on radiation-defect formation in semiconductors under 1–10-MeV proton irradiation. J. Surf. Investig. X-Ray Synchrotron Neutron Tech. 10, 693 (2016). https://doi.org/10.1134/S1027451016020294.
T. Pagava and L. Chkhartishvili, Radiation defects nano-scale inhomogeneous distribution influence on apparent hall mobility in silicon. Nano Res Appl. 03(03) (2017).
N. Bogatov, L. Grigoryan, A. Klenevsky, M. Kovalenko, and I. Nesterenko, Modelling of disordering regions in proton-irradiated silicon. J. Phys. Conf. Ser. 1553, 012015 (2020).
H. Yeritsyan, A. Sahakyan, N. Grigoryan, V. Harutunyan, V. Sahakyan, and A. Khachatryan, Clusters of radiation defects in silicon crystals. J. Mod. Phys. 6, 1270 (2015).
P.F. Lugakov, and I.M. Filippov, Radiation defect clusters in electron-irradiated silicon. Radiat. Eff. 90, 297 (1985).
R. Radu, I. Pintilie, L.C. Nistor, E. Fretwurst, G. Lindstroem, and L.F. Makarenko, Investigation of point and extended defects in electron irradiated silicon-dependence on the particle energy. J. Appl. Phys. 117, 164503 (2015). https://doi.org/10.1063/1.4918924.
H. Yeritsyan, A. Sahakyan, N. Grigoryan, E. Hakhverdyan, V. Harutunyan, V. Sahakyan, A. Khachatryan, B. Grigoryan, V. Avagyan, G. Amatuni, and A. Vardanyan, The influence of pico-second pulse electron irradiation on the electrical-physical properties of silicon crystals. J. Mod. Phys. 7, 1413 (2016). https://doi.org/10.4236/jmp.2016.712128.
N. Bogatov, L. Grigoryan, A. Klenevsky, M. Kovalenko, and I. Nesterenko, Formation of primary radiation defects in a non-equilibrium silicon structure by electron irradiation. J. Phys. Conf. Ser. 1679, 032077 (2020).
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This research is funded by the Science Committee of the Ministry of Education, Science, Culture and Sports of the Republic of Armenia in the frameworks of Projects №21T-2F094 and №21AA-1C012.
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Harutyunyan, V., Sahakyan, A., Manukyan, A. et al. Introduction Rates of Electrically Active Radiation Defects in Proton Irradiated n-Type and p-Type Si Monocrystals. J. Electron. Mater. 52, 7861–7868 (2023). https://doi.org/10.1007/s11664-023-10700-7
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DOI: https://doi.org/10.1007/s11664-023-10700-7