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Effects of Substrate Bias Voltage on Structural and Optical Properties of Co-Sputtered (AlxGa1–x)2O3 Films

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Abstract

Doping of β-Ga2O3 with Al atoms provides an effective approach for further enlargement of the energy bandgap, and enhanced detection in the deep ultraviolet region. Although Al-doped β-Ga2O3 films have been prepared with various methods, challenges remain in the adjustment of crystal quality to obtain superior properties. In this paper, (AlxGa1–x)2O3 (denoted as AGO) films were deposited by magnetron co-sputtering at different bias voltages and annealed at 900°C in air. The dependence of the crystal structure, morphology, and optical properties of the films on bias voltage was investigated. The AGO films exhibit a preferred orientation in the (\(\overline{2}\) 01) plane at various biases, as evidenced by the x-ray diffraction measurements. The films with various bias voltages yield higher crystal quality with optical bandgap of about 5.0 eV. In addition, the AGO films demonstrate 95% absolute average transmittance in the UV-Vis wavelength range. This method thus opens a new way for controlling the quality and properties of AGO films with bias.

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  1. Beijing Key Lab of Special Elastomeric Composite Materials, College of New Materials and Chemical Engineering, Beijing Institute of Petrochemical Technology, No. 19, Qingyuan North Road, Daxing District, Beijing, 102617, China

    Yan Gao, Haitao Dong, Xiaoke Zhang & Wenran Feng

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Gao, Y., Dong, H., Zhang, X. et al. Effects of Substrate Bias Voltage on Structural and Optical Properties of Co-Sputtered (AlxGa1–x)2O3 Films. J. Electron. Mater. 52, 7429–7437 (2023). https://doi.org/10.1007/s11664-023-10673-7

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