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Crystal Structure, Sintering Behavior, and Microwave Dielectric Properties of Low-Permittivity Ba2Zr2Si3O12 Ceramics

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Abstract

This study presents the dielectric properties of Ba2Zr2Si3O12 ceramics, synthesized using the solid state method. The cubic crystal structure of Ba2Zr2Si3O12 ceramics was conclusively verified through the analysis of XRD patterns and subsequent structural refinement. Refined lattice parameters of a = b = c = 10.23178 Å were found, with a corresponding unit cell volume of V = 1071.159026 Å3. The grain microstructure of the ceramics was characterized using SEM, which showed density of 97.6% for the Ba2Zr2Si3O12 ceramic. The Si-O bond valences (VSi-O) were found to be closely related to the τf of the Ba2Zr2Si3O12 ceramics. The microwave dielectric properties of the Ba2Zr2Si3O12 ceramics sintered at 1490°C were ascertained to be εr = 15.08, Q × f = 14885 GHz (f = 9.9 GHz), and τf = −78.6 ppm/°C.

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Acknowledgments

This work was supported by the graduate scientific research innovation project of Shaoyang University (Grant No. CX2022SY035) and the National Natural Science Foundation of China (Grant No. 52102123).

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Authors and Affiliations

  1. College of Information Engineering, Shaoyang University, Shaoyang, 422000, China

    Yingxiang Li & Deyin Liang

  2. Sichuan Province Key Laboratory of Information Materials and Devices Application, College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu, 610225, China

    Xing Zhang & Zhe Xiong

  3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China

    Bin Tang, Feng Si, Zixuan Fang, Zitao Shi & Jingjing Chen

  4. College of Electrical and Information Engineering, Hunan University, Changsha, 410082, China

    Hao Li

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  1. Yingxiang Li
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Li, Y., Liang, D., Zhang, X. et al. Crystal Structure, Sintering Behavior, and Microwave Dielectric Properties of Low-Permittivity Ba2Zr2Si3O12 Ceramics. J. Electron. Mater. 52, 7164–7170 (2023). https://doi.org/10.1007/s11664-023-10651-z

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