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Study of Electronic Synaptic Characteristics in PVA Organic Field-Effect Transistors

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Abstract

In the era of artificial intelligence, traditional von Neumann computer architecture cannot overcome the issue of independent information processing and storage due to the separate storage and processing units. Inspired by the neural systems in the human brain, various artificial synaptic devices have been developed for neuromorphic computing to address the bottleneck of the von Neumann system. Organic field-effect transistors (OFETs) are widely employed to imitate artificial synapses due to their advantages of low cost, flexibility, and simple solution manufacturing. Herein, OFETs were fabricated based on a polyvinyl alcohol (PVA) dielectric layer and dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) channel, which exhibited excellent memory characteristics, including a large memory window of 37.39 V and reliable endurance. In addition, we compared this device with previous reports of synaptic transistors based on different device structure types and summarized the window ratio of transistors, which further demonstrated the excellent memory ability of our organic transistors. More critically, the devices were shown to successfully mimic synaptic behavior such as excitatory postsynaptic currents, and long-term potentiation/depression. The realization of our organic synaptic transistors based on a PVA dielectric layer and DNTT thin-film semiconductor offers a feasible strategy for constructing high-performance neuromorphic devices and further promotes the development of organic synaptic transistors in future neuromorphic computing.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant Nos. 62204136, 62105176).

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  1. Information Science and Technology, Qingdao University of Science and Technology, Qingdao, 266061, China

    Xuzhao Zhang, Bingshuo Li, Haiting Wang, Qian Ding & Shujing Gao

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  1. Xuzhao Zhang
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Zhang, X., Li, B., Wang, H. et al. Study of Electronic Synaptic Characteristics in PVA Organic Field-Effect Transistors. J. Electron. Mater. 52, 5307–5314 (2023). https://doi.org/10.1007/s11664-023-10508-5

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