Abstract
Room-temperature thermoelectric (TE) properties of spin-coated copper tin sulfide (CTS) thin films were studied as a function of annealing temperature in the range 350–500°C. X-ray diffraction patterns revealed that the synthesized simples are for a pure CTS structure but only for an annealing temperature less that 450°C. Hall effect measurements showed a maximum of carrier concentration for the annealing at 400°C. This results in the maximum of electrical conductivity and maximum of mobility. TE measurements revealed that, with annealing, one can access band flattening, through the increase of the effective mass of the carrier. This is, however, challenged by the increase of carrier concentration and, consequently, results in a pronounced decrease in the Seebeck coefficient. The TE power factor was observed to be tunable by annealing. Nevertheless, CTS films remain to be doped for future investigations.
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Authors thank Prof. C.-T. Liang for revising English in the whole paper.
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Welatta, F., El Kissani, A., Mellalou, A. et al. Tuning Thermoelectric Properties of Spin-Coated Cu2SnS3 Thin Films by Annealing. J. Electron. Mater. 52, 5396–5400 (2023). https://doi.org/10.1007/s11664-023-10424-8
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DOI: https://doi.org/10.1007/s11664-023-10424-8