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Elevated Transition Temperature of VO2 Thin Films via Cr Doping: A Combined Electrical Transport and Electronic Structure Study

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Abstract

V1−xCrxO2 (0 ≤ x ≤ 0.3) (VCO) thin films were deposited onto r-sapphire substrates using a pulsed laser deposition method. The electronic structures of these compounds were investigated by x-ray photoemission spectroscopy (XPS), and the electrical transport measurements by four-probe electrical resistivity along with the Hall effect measurements. The XPS study shows that the valency of the Cr ions in the VCO films is 3 + and the V ions are in mixed states of 4 + and 5 + . From the resistivity-temperature measurements, the metal–insulator transition (MIT) temperature (TC) of Vanadium dioxide (VO2) increases significantly upon Cr doping, while the hysteresis width and resistivity follow a gradual decrease. These findings will pave the way for the usage of VO2 films in solar and electrical device applications where larger critical temperatures than pristine VO2 are required.

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Acknowledgments

The authors would like to thank Mr. Shahrukh from the Central University of Kashmir, Mr. Pushp Raj, and Mr. Akashdeep from the Central University of South Bihar for their technical support and help. VRS thanks IUAC Delhi (File number: IUAC/XIII.7/UFR-66327) and SERB Delhi (File No: CRG/2022/002052) for financial support.

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Authors and Affiliations

  1. SpinTec Laboratory, Department of Physics, Central University of South Bihar, Gaya, 824236, India

    M. Zzaman, R. Dawn, A. Kumari & V. R. Singh

  2. Department of Physics, Jamia Millia Islamia (Central University), New Delhi, 110025, India

    M. Zzaman & R. Shahid

  3. Department of Energy Storage and Distribution Resources, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    J. B. Franklin

  4. Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela, 769008, India

    A. Ghosh & S. K. Sahoo

  5. Department of Physics, Beside AP Secretariat, VIT-AP University, Near Vijayawada, Amaravati, A.P., 522237, India

    V. K. Verma

  6. Technical Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai, 400 085, India

    U. K. Goutam

  7. Department of Physics, Ranchi University, Ranchi, 834008, India

    K. Kumar

  8. Materials Science Division, Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India

    R. Meena

  9. Department of Physics and Centre for Interdisciplinary Research, University of Petroleum and Energy Studies (UPES), Dehradun, Uttarakhand, 248007, India

    A. Kandasami

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Zzaman, M., Dawn, R., Franklin, J.B. et al. Elevated Transition Temperature of VO2 Thin Films via Cr Doping: A Combined Electrical Transport and Electronic Structure Study. J. Electron. Mater. 52, 3818–3830 (2023). https://doi.org/10.1007/s11664-023-10359-0

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