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Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates

  • Topical Collection: 19th Conference on Defects (DRIP XIX)
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Abstract

3C-SiC/4H-SiC heterostructures have great potential for high-electron-mobility transistors. The growth of high-quality 3C-SiC epilayers on 4H-SiC substrates can be realized by controlling step growth with proper surface pretreatment. We investigated the optical and electrical properties of extended defects in 3C-SiC by cathodoluminescence (CL) spectroscopy. CL images revealed the distribution of extended defects in 3C-SiC. The impact of surface pretreatment on the growth of high-quality 3C-SiC is discussed.

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Acknowledgments

This work was supported by the TIA collaborative research program “Kakehashi” in 2019 and 2020.

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Authors and Affiliations

  1. Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan

    Jun Chen & Takashi Sekiguchi

  2. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, 3055-8568, Japan

    Hiroyuki Sazawa

  3. Department of Materials Chemistry, Kyoto University, Kyoto, 615-8510, Japan

    Wei Yi

  4. Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, 305-8573, Japan

    Takashi Sekiguchi

Authors
  1. Jun Chen
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  2. Hiroyuki Sazawa
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  4. Takashi Sekiguchi
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Correspondence to Jun Chen.

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Chen, J., Sazawa, H., Yi, W. et al. Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates. J. Electron. Mater. 52, 5075–5083 (2023). https://doi.org/10.1007/s11664-023-10336-7

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  • DOI: https://doi.org/10.1007/s11664-023-10336-7

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