Abstract
Indium-filled InxCo4Sb12 thermoelectric bulk ingots are fabricated via microwave synthesis combined with spark plasma sintering. All major x-ray diffraction peaks are indexed to the body-centered cubic CoSb3, and secondary phases are detected in different samples. Nano-sized CoSb2, incoherent grain boundary and dislocations are observed by scanning transmission electron microscopy (STEM). The carrier concentration of InxCo4Sb12 is 4.95 × 1019–2.91 × 1020 cm−3. Minimum lattice thermal conductivity of 1.63 Wm−1 K−1 is achieved. In0.8Co4Sb12 shows a maximum ZT of 0.90 at 673 K.
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Acknowledgments
This work was jointly supported by the Open Research Project from the State Key Laboratory of Vanadium and Titanium Resources Comprehensive Utilization (Grant No. 2021P4FZG10A), National Natural Science Foundation of China (Grant No. 51974005, No. 51574134), University Synergy Innovation Program of Anhui Province (Grant No. GXXT-2020-007), and Open Research Project from the State Key Laboratory of Refractories and Metallurgy (Grant No. G202001).
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Yong, C., Lei, Y., Jiang, X. et al. Microstructure and High-Temperature Thermoelectric Performance of InxCo4Sb12 Fabricated via Microwave Synthesis Combined with Spark Plasma Sintering. J. Electron. Mater. 52, 2913–2918 (2023). https://doi.org/10.1007/s11664-023-10296-y
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DOI: https://doi.org/10.1007/s11664-023-10296-y