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OFF Current Reduction in Negative Capacitance Heterojunction TFET

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Abstract

A double-gate heterojunction negative-capacitance tunnel field-effect transistor is proposed for OFF-current reduction with the help of a dual-material gate. In the proposed structure, the gate oxide is a layered arrangement of high-κ dielectric over low-κ dielectric to increase gate control and to eliminate lattice mismatch issues. The tangent line approximation approach is utilized in both the source-channel region and the channel-drain region to precisely model the drain current. The model is validated using two-dimensional simulations of the double-gate heterojunction dual-material gate tunnel field-effect transistor using the one-dimensional (1-D) Landau–Khalatnikov equation. The proposed topology also exhibits improvements in sub-threshold swing, ON–OFF drain current ratio, and output characteristics. The model precisely matches the device simulator results.

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Author notes

  1. Bhavani Krishna and Hridya Harikumar contributed equally to this work.

Authors and Affiliations

  1. School of Engineering, CUSAT, Kochi, Kerala, India

    U. S. Shikha, Bhavani Krishna, Hridya Harikumar, Anju Pradeep & Rekha K. James

  2. Department of Electronics, College of Engineering Poonjar, Kottayam, Kerala, India

    Jobymol Jacob

Authors
  1. U. S. Shikha
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  2. Bhavani Krishna
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  3. Hridya Harikumar
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  4. Jobymol Jacob
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  5. Anju Pradeep
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  6. Rekha K. James
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Contributions

SUS: Conceptualization, Writing – original draft, Methodology. BK: Investigation, Writing – original draft. HH: Investigation, Writing – original draft. JJ: Conceptualization, Writing – review and editing. AP: Supervision, Writing – review and editing. RKJ: Writing – review and editing, Supervision

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Correspondence to U. S. Shikha.

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Shikha, U.S., Krishna, B., Harikumar, H. et al. OFF Current Reduction in Negative Capacitance Heterojunction TFET. J. Electron. Mater. 52, 2695–2707 (2023). https://doi.org/10.1007/s11664-023-10232-0

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  • DOI: https://doi.org/10.1007/s11664-023-10232-0

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