Abstract
The practical verification and comparative analysis of one- and two-diode models of a 31.6% efficiency space triple-junction InGaP2/InGaAs/Ge solar cell is presented. Based on the experimental I–V curves of the sub-cells under the air mass 0 (AM0) spectral condition, the diode characteristics of the sub-cells are extracted by the mathematical model of the solar cell diode equivalent circuits. The circuit simulation software, LTSpice, is used to establish the equivalent one-diode and two-diode circuit models of the triple-junction solar cell. The simulation results are compared with the experimental observations of the triple-junction solar cell I–V characteristics under the AM0 spectral condition, demonstrating that the difference in value between the one-diode model and the practical verification cell-in-cell efficiency is 4%, while that of the two-diode model is 0.4%, which may indicate that the two-diode model has better accuracy in the circuit simulation of triple-junction InGaP2/InGaAs/Ge solar cells. This work will be helpful in the structural optimization design of space solar cells and the circuit simulation of spacecraft solar arrays.
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This work was supported by the National Science Foundation of China (U19376003).
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All authors contributed to the conception and design. Material preparation, data collection, and analysis were performed by Wenqi Zhao, Ning Yang, Jian Li, Liangchao Fang, Wenjia Han, Wenjia Lv, Maoshu Yin, and Jianqin Zhang. The first draft of the manuscript was written by Wenqi Zhao and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Zhao, W., Yang, N., Li, J. et al. Practical Verification and Comparative Analysis of One- and Two-Diode Models of Space Triple-Junction InGaP2/InGaAs/Ge Solar Cell. J. Electron. Mater. 52, 2580–2586 (2023). https://doi.org/10.1007/s11664-023-10220-4
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DOI: https://doi.org/10.1007/s11664-023-10220-4