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Growth and Characterization of High-Quality Orthorhombic Phase CsPbBr3 Perovskite Single Crystals for Optoelectronic Applications

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Abstract

Caesium lead bromide (CsPbBr3) has received a lot of interest as a model compound suitable for photovoltaics and many other optoelectronic applications. However, growing significant volumes of CsPbBr3 single crystals is difficult. Herein, a facile room temperature crystal growth strategy is used to generate high-quality and large single crystals of single-phase orthorhombic-CsPbBr3 perovskite at room temperature. The optical, structural, and electrical properties of this crystal are also studied here. It has been found that the single crystals grown at room temperature show better thermal stability and complete sublimation without any decomposition leaving a clue that this material can be thermally deposited into thin films with ease. This significant aspect has also been successfully verified here by thermally depositing a fine and high-quality film of CsPbBr3 using single-crystal powder as the source.

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Acknowledgments

The authors are thankful to The ANERT, Govt. of Kerala, for the financial support for this work (Project No. ANERT-TECH/11/2019-S(NEP)) and to the Centre for Materials Characterization, NIT Calicut for the help and support during the work.

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  1. Laboratory for Molecular Photonics and Electronics (LAMP), Department of Physics, National Institute of Technology, Calicut, India

    P. Sujith, M. Pratheek & P. Predeep

  2. Department of Applied Sciences, National Institute of Technology Goa, Farmagudi, Ponda, Goa, 403401, India

    P. Sujith & Saidi Reddy Parne

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Sujith, P., Pratheek, M., Parne, S.R. et al. Growth and Characterization of High-Quality Orthorhombic Phase CsPbBr3 Perovskite Single Crystals for Optoelectronic Applications. J. Electron. Mater. 52, 718–729 (2023). https://doi.org/10.1007/s11664-022-10042-w

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