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Optimization of CdZnyS1−y Buffer Layer Properties for a ZnO/CZTSxSe1−x/Mo Solar Cell to Enhance Conversion Efficiency

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Abstract

In this paper, we focus on optimizing the solar performance of a CZTSSe-based solar cell by adjusting the zinc and sulfur concentrations in the CdZnS buffer layer and the quinary absorber CZTSSe. The state-of-the-art work is to combine the ZnS and CdS binaries into CdZnS ternary used as a buffer layer in both CZTS- and CZTSSe-based solar cells. An overall study of its properties is carried out taking into account the strain present at the heterointerface, defect density, bandgap energy and the interface state density. As a result, the highest efficiency η = 14.59% was achieved with a sulfur content of 0.55 and a zinc content of 0.70 to bandgap energies of 1.25 and 3.12 eV for CZTSSe and CdZnS materials, respectively. Our simulation is validated by the reproducibility of solar cell performance under the same conditions, and an enhancement of the conversion efficiency of about Δη = 5.55% will be achieved when the CdS layer is replaced by CdZnS in the ZnO/CdS/CZTSSe/Mo/Glass solar device.

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Authors and Affiliations

  1. Faculty of Technology, University of Blida.1, 09000, Blida, Algeria

    M. Boubakeur, A. Aissat & L. Chenini

  2. Laboratory of Micro-Optoelectronics and Nanostructures, Department of Physics, Faculty of Sciences of Monastir, Universite de Monastir, 5019, Avenue de l’Environnement, Monastir, Tunisia

    M. Ben Arbia & H. Maaref

  3. Institut d’Electronique, de Microelectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Université des Sciences et Technologies de Lille, 1, Avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq, France

    A. Aissat & J. P. Vilcot

Authors
  1. M. Boubakeur
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  2. A. Aissat
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  3. L. Chenini
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  4. M. Ben Arbia
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Correspondence to A. Aissat.

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Boubakeur, M., Aissat, A., Chenini, L. et al. Optimization of CdZnyS1−y Buffer Layer Properties for a ZnO/CZTSxSe1−x/Mo Solar Cell to Enhance Conversion Efficiency. J. Electron. Mater. 52, 284–292 (2023). https://doi.org/10.1007/s11664-022-09986-w

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  • DOI: https://doi.org/10.1007/s11664-022-09986-w

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