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ZnO Single-Nanowire Schottky Barrier Resistive Switching Memory Assembly with Dielectrophoresis

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Abstract

Single nanowires and networks are considered promising candidate miniaturized memristive devices for brain-inspired systems. In this study, we prepared an Au/single ZnO nanowire/Au memristor by the in situ electric dielectrophoretic assembly method. The I–V curve indicates that the self-rectifying Au/ZnO nanowires form a back-to-back Schottky barrier. Further experiments have shown that the current of the device is controlled by the barrier enhancement layer generated during dielectrophoresis assembly. The device in a high-resistance state shows very low leakage current, with six orders of magnitude of resistance ratio between the conducting and insulating states and response time less than 20 ns. The recovery time constants for the device are 2.50 s, 10.59 s, 15.00 s and 23.35 s under a pulse width of 5 ms and pulse height of 3 V, 4 V, 5 V and 6 V.

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Acknowledgments

This study is supported by the National Natural Science Foundation of China (Grant No. 61805071) and the joint fund of Henan Province (No. U1804162), Henan Provincial Key Science and Technology Research Projects, China (No. 202102310196, 212102310907), Doctoral Fund of Henan University of Engineering (No. D2017013).

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Authors and Affiliations

  1. School of Electrical Information Engineering, Henan University of Engineering, Zhengzhou, 451191, China

    Xinghui Wu, Qiuhui Zhang, Xicheng Xiong, Tongjun Zhu & Qixing Xu

  2. School of Mechanical Engineering, Henan University of Engineering, Zhengzhou, 451191, China

    Nana Cui

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  1. Xinghui Wu
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Correspondence to Xinghui Wu.

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Wu, X., Cui, N., Zhang, Q. et al. ZnO Single-Nanowire Schottky Barrier Resistive Switching Memory Assembly with Dielectrophoresis. J. Electron. Mater. 51, 7190–7197 (2022). https://doi.org/10.1007/s11664-022-09959-z

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