Abstract
Optical and structural properties of pulsed laser-deposited CdSSe thin films were grown using different temperatures on different substrates. The results of optical and structural investigation show that these films are suitable for optoelectronics applications. The energy band gap lies in the range that is suitable for the desired purpose. x-ray diffraction (XRD) analysis indicated preferential orientation in the (220) direction. The band gap energy of these films is in the range of 2.277 to 2.641 eV.
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Acknowledgments
The authors are thankful to the University of Puerto Rico, Rico Piedra Campus SPECLAB, San Juan, Puerto Rico, for providing the deposition and characterization facilities. The author is also thankful to the Material Science Lab, Department of Physics, Gurukul Kangri (Deemed to be University), Haridwar-249404, Uttarakhand, India, for providing other lab facilities. This work was partially supported by the DoD-AFOSR grant #FA9550-20-1-0064.
Funding
Air Force Office of Scientific Research, FA9550-20-1-0064, Ram S. Katiyar.
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Kumar, P., Kumar, D., Kumar, A. et al. Study of CdSSe Thin Film Using Different Substrates Deposited by Pulsed Laser Deposition Technique. J. Electron. Mater. 51, 5759–5769 (2022). https://doi.org/10.1007/s11664-022-09793-3
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DOI: https://doi.org/10.1007/s11664-022-09793-3