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Structural, Optical and Electrical Properties of Band-Aligned CdBr2/Au/Ga2S3 Interfaces and Their Application As Band Filters Suitable for 5G Technologies

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Abstract

Herein, the structural, optical and electrical properties of band-aligned CdBr2/Ga2S3 interfaces in the presence and absence of Au nanosheets (10-20 nm) as interface spacers are reported. CdBr2/Au/Ga2S3 (CAG) stacked layers are grown by vacuum evaporation under a vacuum pressure of 10-5 mbar. It is observed that coating of amorphous Ga2S3 onto CdBr2 increases the crystallite size and decreases the microstrain, defect density and stacking faults in hexagonal CdBr2. Depositing Ga2S3 onto CdBr2 enhanced the light absorbability of Ga2S3 by more than 120 times. Insertion of Au nanosheets as spacers between the Ga2S3 and CdBr2 layers highly engineered the energy band gap of the CAG structure. In addition, the frequency-dependent capacitance, conductance and impedance spectroscopy analyses in the microwave frequency domain have shown the ability of the CAG structure to reveal negative capacitance effect and the ability to behave as microwave resonators displaying controllable (by Au nanosheets) resonance-antiresonance phenomena. CAG bilayers showed microwave band pass/reject characteristics with tunable and multiband features. The microwave cutoff frequency at the notch frequency of the band filters are found to suitable for the 5G mobile technologies.

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Data Availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgments

This work was funded by the deanship of scientific research at the Arab American University, Jenin camp, Palestine, under project number Cycle I 2020-2021. It is also supported by the scientific research council at University of Istinye, Istanbul. Turkey. The authors would like to thank Assoc. Prof. Dr. Tarek S. Kayed for his help in evaluating Reitveld method analysis.

Funding

This study was funded by the Deanship of Scientific Research (DSR), Arab American University, Palestine, and by the University of Istinye, Istanbul. Turkey.

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Authors and Affiliations

  1. Department of Physics, Arab American University, Jenin, 240, Palestine

    A. F. Qasrawi & Areen A. Hamarsheh

  2. Department of Electrical and Electronics Engineering, Istinye University, 34010, Istanbul, Turkey

    A. F. Qasrawi

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  1. A. F. Qasrawi
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  2. Areen A. Hamarsheh
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Correspondence to A. F. Qasrawi.

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Qasrawi, A.F., Hamarsheh, A.A. Structural, Optical and Electrical Properties of Band-Aligned CdBr2/Au/Ga2S3 Interfaces and Their Application As Band Filters Suitable for 5G Technologies. J. Electron. Mater. 51, 3693–3704 (2022). https://doi.org/10.1007/s11664-022-09616-5

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